Controlling Oxygen Content by Varying Oxygen Partial Pressure in Chromium Oxynitride Thin Films Prepared by Pulsed Laser Deposition
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منابع مشابه
Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition
(CeOy)0.67(Al2O3)0.33 (1.5<y<2) (CeAlOx) thin films were deposited on p-type Si ~100! substrates by the pulsed laser deposition method at 650 °C. The effect of oxygen pressure on structural and thus dielectric properties of the CeAlOx films was extensively investigated. The CeAlOx thin films turned from a mixture of crystalline CeO2 , Ce2O3 , and Al2O3 to the amorphous CeAlO3 as the deposition ...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2013
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.m2013047